Photovoltaic inverter IGBT selection

Can IGBTs be used in a solar inverter?

These topologies use IGBTs as the power discrete semiconductor of choice for achieving high eficiency and high reliability. This application note presents how Bourns® Trench-Gate Field-Stop (TGFS) IGBTs with co-packaged Fast Recovery Diodes (FRDs) can be used in a solar inverter application to enable eficient power conversion.

Can Bourns® Trench-Gate field-stop (TGFs) IGBTs be used in a solar inverter?

This application note presents how Bourns® Trench-Gate Field-Stop (TGFS) IGBTs with co-packaged Fast Recovery Diodes (FRDs) can be used in a solar inverter application to enable eficient power conversion. It also outlines the optimal IGBT features necessary for superior thermal performance while delivering low power dissipation.

Are insulated-gate bipolar transistors a good choice for solar inverter applications?

For solar inverter applications, it is well known that insulated-gate bipolar transistors (IGBTs) ofer benefits compared to other types of power devices, like high-current-carrying capability, gate control using voltage instead of current and the ability to match the co-pack diode with the IGBT.

What is a 4th IGBT?

The fourth IGBT is a trench-gate IGBT optimized to deliver low con-duction and switching losses for high-frequency switching such as in solar inverter applications. An IGBT is basically a bipolar junction transistor (BJT) with a metal oxide semiconductor gate structure.

Can a co-pack diode be optimized for a low-side IGBT?

Co-pack diodes across the low-side IGBTs can be optimized to minimize losses during freewheeling and reverse recovery. Let’s assume a 1.5-kW solar inverter is being designed with a 230-Vac output. Which IGBT shown in the table will give the lowest power dissipation at 20 kHz?

What is the difference between IGBT and MOSFET?

In multi-string topology, Insulated Gate Bipolar Transistors (IGBTs) are utilized for high power and low switching frequency whereas, Metal Oxide Field Effect Transistors (MOSFETs) are used for high switching and low power. 6.4. AC modules In this topology, the integration of inverter and PV module is carried out in a single electrical device.