Carbon nanotube solar photovoltaic power generation

Can carbon nanotubes be used as photovoltaic materials?

Indeed, a variety of photovoltaic devices using carbon nanotubes such as carbon nanotube-based organic solar cells 16, photoelectrochemical cells 17, dye-sensitized solar cells 18 and carbon nanotube/Si solar cells 19, 20 have been reported. Furthermore, the importance of carbon nanotubes as photovoltaic materials is continually increasing.

Can carbon nanotube-based solar cells improve photovoltaic performance?

Wang F, Kozawa D, Miyauchi Y, Hiraoka K, Mouri S, Ohno Y, Matsuda K (2015a) Considerably improved photovoltaic performance of carbon nanotube-based solar cells using metal oxide layers. Nat Commun 6 (1):1–7

Are single wall carbon nanotubes a good photovoltaic material?

Single wall carbon nanotubes possess a wide range of direct bandgaps matching the solar spectrum, strong photoabsorption, from infrared to ultraviolet, and high carrier mobility and reduced carrier transport scattering, which make themselves ideal photovoltaic material.

What is the photovoltaic performance of a single-walled carbon nanotube (SWNT)?

As a consequence, the photovoltaic performance of both p -single-walled carbon nanotube (SWNT)/ n -Si and n -SWNT/ p -Si heterojunction solar cells using MoO x and ZnO layers is improved, resulting in very high photovoltaic conversion efficiencies of 17.0 and 4.0%, respectively.

Can single-walled carbon nanotubes be used in solar cells?

Extensive progress has been realized through the use of CNTs, especially single-walled carbon nanotubes (SWCNTs), in optoelectronics and energy harvesting devices, including solar cells, light-emitting diodes, touch panels, and transistors. Here, we review the novel applications of CNTs in solar cells.

What is a single-walled carbon nanotube (SWNT)/Si hybrid solar cell?

The photovoltaic performance of the single-walled carbon nanotube (SWNT)/Si hybrid solar cells is improved using these multifunctional MoO x and ZnO layers, with high power conversion efficiencies (PCE) of 17.0 and 4.0% achieved for p -SWNT/ n -Si and n -SWNT/ p -Si devices, respectively.